rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140207 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, in c. 1 of 7 sda - 4000 gaas distributed amplif i er rfmds sda - 4000 is a directly coupled (dc) gaas microwave monolithic integrated circuit (mmic) driver amplifier die. it is designed for use as an electro - absorptive modulated laser (eml) driver employing single - ended (se) architectures with v (v - pi) ranging from 2v to 5v, and as a clock driver for return - to - zero (rz) and carrier select (cs) carver modulators. it can also be used for broadband autom ated test equipment (ate), instrumentation, military, and aerospace applications. functional block diagram ordering information sda - 4000 gaas distributed amplifier , gel pa k , 10 pieces or more sda - 4000 sb gaas distributed amplifier, gelpak, 2 pieces package: die, 3.1mm x 1.45mm x 0.102mm features dc to 32 ghz operation 22 dbm p 3db gain = 1 5 db typical noise figure 3.0 db output voltage to 5 v pp single supply voltage 160 ma total current applications driver for single - ended (se) eml clock driver for rz and cs pulse carver broadband ate instrumentation military a erospace sda - 4000
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140207 for sales or technical support, contact rf md at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applicatio n circuitry and specifications at any time without prior notice. 2 of 7 sda - 4 000 absolute maximum rat ings parameter rating unit voltage (v dd ) + 6 .0 v dc gate bias voltage (v ti ) - 1.5 to + 0 .2 v dc gate bias voltage (v g2 ) (v dd - 5 .0) v dc to v dd v rf input power (v dd = +5 .0v dc ) + 15 dbm operating junction temperature (t j ) +1 25 c continuous power dissipation (t = +85c) 1 w thermal resistance (pad to die bottom) 84 c/w storage temperature - 40 to +150 c operating temperature 0 to +85 c esd jesd22 - a114 human body model (hbm) class 0 (all pads) caution! esd sensitive device. rfmd green: rohs compliant per eu directive 2011/65/eu, halogen free per iec 61249 - 2 - 21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max general performance t a = +25c, v dd = +5 v dc , v g2 = +2 v dc , i dd = 160 ma * operating frequency 0 32 ghz 3db bw gain 13.5 14.5 db 16 ghz output voltage 5 v p - p ip3 at mid - band 27 dbm p out + 0 dbm /tone, 16ghz p1db at mid - band 18 dbm 16ghz p3db at mid - band 22 dbm 16ghz noise figure at mid - band 3.2 db 16ghz input return loss 15 db dc to 25ghz output return loss 20 db dc to 25ghz supply current 160 ma supply voltage 5 v dc *adjust vti between - 1.5v dc to +0.2v dc to achieve i dd = 160 ma typical., v g2 = 2 v dc
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140207 for sales or technical support, contact rf md at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applicatio n circuitry and specifications at any time without prior notice. 3 of 7 sda - 4 000 typical performance
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140207 for sales or technical support, contact rf md at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applicatio n circuitry and specifications at any time without prior notice. 4 of 7 sda - 4 000 typical performance ( continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140207 for sales or technical support, contact rf md at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applicatio n circuitry and specifications at any time without prior notice. 5 of 7 sda - 4 000 application schematic die drawing ( dimensions in microns ) notes: 1. no connection required for unlabeled bond pads 2. die thickness is 0.102mm (4mil ) 3. typical bond pad is 0.100mm square 4. backside meta l l ization: gold 5. backside metal is ground 6. bond pad meta l l ization: gold note: drain bias (v dd ) must be applied through a broadband bias tee or external bias network.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140207 for sales or technical support, contact rf md at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applicatio n circuitry and specifications at any time without prior notice. 6 of 7 sda - 4 000 pin names and descriptions pin name description interface schematic 1 rfin rf input. this pad is dc coupled and matched to 50 from dc to 32 ghz. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for rf input and output. 2 vg2 vg2 is an optional pad. it may be used to bias the cascode gate of the amplifier. if this port is used, a 1000pf bypass capacitor with the shortest wirebond length possible is recommended to prevent low frequency gain ripple. 3 vto the output drain termination pad. this pad requires a suggested 1000pf bypass capacitor with the shortest wirebond length to prevent low frequency gain ripple. the value of the external capacitance limits the low frequency response of the amplifier. 4 rfout and vdd rf output. 50 microstrip transmission line on 0.127mm (5mil) thick alumina thin film substrate is recommended for rf input and output. connect the dc bias (v dd ) network to provide drain current (i dd ). 5 vcas provides vg2 gate voltage to the cascode amplifier. the value is ~ (v cc /2 C absolute value of vti). 6 vg21 not connected. 7 vti input gate voltage, used to bias the amplifier. the value is between - 1.5v dc (device is pinched off) to +0.2v dc (fully on). this pad requires a bypass capacitor to ground with the shortest possible wirebond length to prevent low frequency gain ripple. the value of the external capacitance limits the low frequency response of the amplifier. die gnd ground connection. connect die bottom directly to ground plane for best performance. note: the die should be connected directly to the ground plane with conductive epoxy.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140207 for sales or technical support, contact rf md at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended applicatio n circuitry and specifications at any time without prior notice. 7 of 7 sda - 4 000 assembly diagram measurement technique all specifications and typical performances reported in this document were measured in the following manner. data was taken using a temperature controlled probe station utilizing 150m pitch gsg probes. the interface between the probes and integrate d circuit was made with a coplanar to microstrip ce ramic test interface. the test interface was then wire bonded to the die as shown in the figure below using 1 mil diameter bondwires. the spacing between the test interface and the die was 200m, and the bon d wire loop height was 100m. the thickness of th e test interface is 125m (5mil). the calibration of the test fixture included the probes and test interfaces, so that the measurement reference plane was at the point of bond wire attachment. therefore, all data represents the integrated circuit and accom panying bond wires.
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